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Handbook Series On Semiconductor Parameters - Volume 1: Si, Ge, C (Diamond), Gaas, Gap, Gasb, Inas, Inp, Insb Shur, Michael S (Rensselaer Polytechnic Inst, Usa)
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Handbook Series On Semiconductor Parameters - Volume 1: Si, Ge, C (Diamond), Gaas, Gap, Gasb, Inas, Inp, Insb
Shur, Michael S (Rensselaer Polytechnic Inst, Usa)
Designed for scientists, engineers, students and technicians working in semiconductor materials and devices, this is part of a five-volume series that provides data on the most popular semiconductor materials. This first volume contains data on Si, Ge, diamond, GaAs, GaP, GaSb, InAs, InP and InSb.
218 pages
| Media | Books Hardcover Book (Book with hard spine and cover) |
| Released | February 26, 1999 |
| ISBN13 | 9789810229344 |
| Publishers | World Scientific Publishing Co Pte Ltd |
| Pages | 232 |
| Dimensions | 162 × 225 × 18 mm · 453 g |
| Editor | Gildenblat, Gennady Sh (Pennsylvania State Univ, Usa) |
| Editor | Goldberg, Yu A (Ioffe Physico-technical Inst, Russia) |
| Editor | Levinshtein, Michael E (Ioffe Inst Of The Russian Academy Of Sci, Russia) |
| Editor | Mikhailova, Maya P (Ioffe Inst Of The Russian Academy Of Sci, Russia) |
| Editor | Rumyantsev, Sergey (Rensselaer Polytechnic Inst, Usa & Ioffe Inst Of The Russian Academy Of Sci, Russia) |
| Editor | Schmidt, Natalya M (Ioffe Inst Of The Russian Academy Of Sci, Russia) |
| Editor | Vorobjev, Leonid (St Petersburg State Tech Univ, Russia) |
| Editor | Ya Vul', Alexander (Ioffe Physico-technical Inst, Russia) |
