Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics - Viktor Sverdlov - Books - Springer Verlag GmbH - 9783709103814 - November 24, 2010
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Viktor Sverdlov
Strain-Induced Effects in Advanced MOSFETs - Computational Microelectronics 2011 edition

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Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.

268 pages, 101 black & white illustrations, 50 black & white tables, biography

Media Books     Hardcover Book   (Book with hard spine and cover)
Released November 24, 2010
ISBN13 9783709103814
Publishers Springer Verlag GmbH
Pages 252
Dimensions 170 × 244 × 15 mm   ·   635 g
Language French  

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