Doping in III-V Semiconductors - Cambridge Studies in Semiconductor Physics and Microelectronic Engineering - Schubert, E. F. (AT&T Bell Laboratories, New Jersey) - Books - Cambridge University Press - 9780521017848 - August 22, 2005
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Doping in III-V Semiconductors - Cambridge Studies in Semiconductor Physics and Microelectronic Engineering

Schubert, E. F. (AT&T Bell Laboratories, New Jersey)

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Doping in III-V Semiconductors - Cambridge Studies in Semiconductor Physics and Microelectronic Engineering

This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The various techniques and the key characteristics of dopants that are employed in III–V semiconductors are presented.

632 pages, 240 b/w illus. 1 table

Media Books     Paperback Book   (Book with soft cover and glued back)
Released August 22, 2005
ISBN13 9780521017848
Publishers Cambridge University Press
Pages 632
Dimensions 229 × 151 × 40 mm   ·   936 g
Language English  
Series Editor Ahmad, Haroon
Series Editor Broers, Alec
Series Editor Pepper, Michael

See all of Schubert, E. F. (AT&T Bell Laboratories, New Jersey) ( e.g. Paperback Book and Hardcover Book )