Doping in III-V Semiconductors - Cambridge Studies in Semiconductor Physics and Microelectronic Engineering - Schubert, E. F. (AT&T Bell Laboratories, New Jersey) - Books - Cambridge University Press - 9780521419192 - September 30, 1993
In case cover and title do not match, the title is correct

Doping in III-V Semiconductors - Cambridge Studies in Semiconductor Physics and Microelectronic Engineering

Schubert, E. F. (AT&T Bell Laboratories, New Jersey)

Price
CA$ 360.99
excl. VAT

Ordered from remote warehouse

Expected delivery Jun 5 - 16

Our customers say:

14-day return policy in accordance with European consumer protection law
Top ranking on Trustpilot
Add to your iMusic wish list

Also available as:

Doping in III-V Semiconductors - Cambridge Studies in Semiconductor Physics and Microelectronic Engineering

This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The various techniques and the key characteristics of dopants that are employed in III-V semiconductors are presented.

632 pages, 240 b/w illus. 1 table

Media Books     Hardcover Book   (Book with hard spine and cover)
Released September 30, 1993
ISBN13 9780521419192
Publishers Cambridge University Press
Pages 632
Dimensions 157 × 234 × 36 mm   ·   1.02 kg
Series Editor Ahmad, Haroon
Series Editor Broers, Alec
Series Editor Pepper, Michael

See all of Schubert, E. F. (AT&T Bell Laboratories, New Jersey) ( e.g. Paperback Book and Hardcover Book )