Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications - Topics in Applied Physics - - Books - Springer Verlag, Singapore - 9789811512117 - March 24, 2020
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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications - Topics in Applied Physics Second Edition 2020 edition

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425 pages, 183 Illustrations, color; 130 Illustrations, black and white; XIV, 425 p. 313 illus., 183

Media Books     Hardcover Book   (Book with hard spine and cover)
Released March 24, 2020
ISBN13 9789811512117
Publishers Springer Verlag, Singapore
Pages 425
Dimensions 150 × 220 × 20 mm   ·   822 g
Editor Ishiwara, Hiroshi
Editor Okuyama, Masanori
Editor Park, Byung-Eun
Editor Sakai, Shigeki
Editor Yoon, Sung-Min

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