Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications - Topics in Applied Physics -  - Books - Springer Verlag, Singapore - 9789811512148 - March 24, 2021
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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications - Topics in Applied Physics Second Edition 2020 edition

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425 pages, 183 Illustrations, color; 130 Illustrations, black and white; XIV, 425 p. 313 illus., 183

Media Books     Paperback Book   (Book with soft cover and glued back)
Released March 24, 2021
ISBN13 9789811512148
Publishers Springer Verlag, Singapore
Pages 425
Dimensions 150 × 220 × 10 mm   ·   612 g
Editor Ishiwara, Hiroshi
Editor Okuyama, Masanori
Editor Park, Byung-Eun
Editor Sakai, Shigeki
Editor Yoon, Sung-Min

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