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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications - Topics in Applied Physics Second Edition 2020 edition
Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications - Topics in Applied Physics
425 pages, 183 Illustrations, color; 130 Illustrations, black and white; XIV, 425 p. 313 illus., 183
| Media | Books Paperback Book (Book with soft cover and glued back) |
| Released | March 24, 2021 |
| ISBN13 | 9789811512148 |
| Publishers | Springer Verlag, Singapore |
| Pages | 425 |
| Dimensions | 150 × 220 × 10 mm · 612 g |
| Editor | Ishiwara, Hiroshi |
| Editor | Okuyama, Masanori |
| Editor | Park, Byung-Eun |
| Editor | Sakai, Shigeki |
| Editor | Yoon, Sung-Min |