Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications - Topics in Applied Physics -  - Books - Springer - 9789402414165 - June 15, 2018
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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications - Topics in Applied Physics Softcover reprint of the original 1st ed. 2016 edition

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347 pages, 159 Tables, color; 150 Illustrations, color; 104 Illustrations, black and white; XVIII, 3

Media Books     Paperback Book   (Book with soft cover and glued back)
Released June 15, 2018
ISBN13 9789402414165
Publishers Springer
Pages 347
Dimensions 150 × 220 × 10 mm   ·   522 g   (Weight (estimated))
Editor Ishiwara, Hiroshi
Editor Okuyama, Masanori
Editor Park, Byung-Eun
Editor Sakai, Shigeki
Editor Yoon, Sung-Min

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