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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications - Topics in Applied Physics Softcover reprint of the original 1st ed. 2016 edition
Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications - Topics in Applied Physics
347 pages, 159 Tables, color; 150 Illustrations, color; 104 Illustrations, black and white; XVIII, 3
| Media | Books Paperback Book (Book with soft cover and glued back) |
| Released | June 15, 2018 |
| ISBN13 | 9789402414165 |
| Publishers | Springer |
| Pages | 347 |
| Dimensions | 150 × 220 × 10 mm · 522 g (Weight (estimated)) |
| Editor | Ishiwara, Hiroshi |
| Editor | Okuyama, Masanori |
| Editor | Park, Byung-Eun |
| Editor | Sakai, Shigeki |
| Editor | Yoon, Sung-Min |